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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 4
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Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
Інший ID:
PACS 61.05.cp, 64.75.Nx, 78.55.-m, 78.67.Hc, 78.55.Cr, 78.67.De, 81.07.St
Посилання:
Deformation state of short-period AlGaN/GaN superlattices
at different well-barrier thickness ratios / V.P. Kladko, N.V. Safriuk, H.V. Stanchu, A.V. Kuchuk, V.P. Melnyk, A.S. Oberemok, S.B. Kriviy, Z.V. Maksymenko, A.E. Belyaev, B.S. Yavich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 317-324. — Бібліогр.: 26 назв. — англ.
Підтримка:
This study was supported by the National Academy
of Sciences of Ukraine within the framework of the
scientific-technological programs “Nanotechnology and
Nanomaterials” №3.5.1.12 and №3.5.1.30.
Дата:
2014
Переглядів:
878
Завантажень:
627
Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios
Анотація:
Dependence of deformation characteristics changing in superlattice (SL)
structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period
was studied in this work. The deformation state of SL and individual layers, relaxation
level and periods, layers’ thickness and composition of AlxGa₁₋xN layers were analyzed
using high-resolution X-ray diffractometry. It was ascertained that the buffer layer and
SL layers are compressed in all the investigated structures. Thus, it has been shown that
deformation of the SL period depends on the well/barrier thickness ratio. Thicknesses of
individual layers in SL strongly depend on the deformation state of the whole system.
Increasing the deformation level leads to the increase of the barrier layer thickness.
