Low voltage FLC for fast active matrix displays

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 3
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dc.contributor.author	Andreev, A.
dc.contributor.author	Andreeva, T.
dc.contributor.author	Kompanets, I.
dc.date.accessioned	2017-05-30T07:04:47Z
dc.date.available	2017-05-30T07:04:47Z
dc.date.issued	2010
dc.identifier.citation	Low voltage FLC for fast active matrix displays / A. Andreev, T. Andreeva, I. Kompanets // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 290-293. — Бібліогр.: 3 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.30.Gd
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118407
dc.description.abstract	The process of FLC director reorientation in alternating electric field is considered for the case when interaction of FLC molecules with the substrates results in partial unwinding the helix structure and motion of domain walls. The hysteresis-free electrooptical response as fast as 50…70 μs was achieved in the FLC cell of 1.3-μm thickness in the electric field 1 V/μm. This result is very important for the practical use of FLC in fast active matrix displays.	uk_UA
dc.description.sponsorship	Authors thank the Russian Foundation for Basic Research for the support of grants 08-07-13554, 07-02- 00785 and 07-07-91582 as well as thank the Russian Academy of Sciences for its support of this work on the Program “Polyfunctional materials for molecular electronics”.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Low voltage FLC for fast active matrix displays	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA