Calculated images of dislocations in crystals on section topograms

dc.contributor.author	Novіkov, S.M.
dc.contributor.author	Fodchuk, І.M.
dc.contributor.author	Fedortsov, D.G.
dc.contributor.author	Struk, A.Ya.
dc.date.accessioned	2017-05-30T06:55:45Z
dc.date.available	2017-05-30T06:55:45Z
dc.date.issued	2010
dc.identifier.citation	Calculated images of dislocations in crystals on section topograms / S.M. Novіkov, І.M. Fodchuk, D.G. Fedortsov, A.Ya. Struk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 268-272. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.05.cp, 61.10.Nz, 61.43.Bn, 61.72.Lk, 61,85. + Р, 61.80.Cb
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118401
dc.description.abstract	By means of numerical solution of the Takagi equations, modeling of X-ray topographic images of deformation fields of the dislocation loops and dislocation of different types. Diffraction images created by dislocations and dislocation loops of different size and spatial location are complicated and versatile in their thin structure.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Calculated images of dislocations in crystals on section topograms	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA