Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 2
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dc.contributor.author	Kondryuk, D.V.
dc.contributor.author	Kramar, V.M.
dc.contributor.author	Kroitor, O.P.
dc.date.accessioned	2017-05-30T05:58:06Z
dc.date.available	2017-05-30T05:58:06Z
dc.date.issued	2014
dc.identifier.citation	Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms / D.V. Kondryuk, V.M. Kramar, O.P. Kroitor // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 2. — С. 160-164. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 63.20.Kr, 79.60 Jv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118365
dc.description.abstract	Using approximation of dielectric continuum and the Green function method, studied in this work is the influence of electron-phonon interaction on position of the bottom of the ground energy band for electron in the quantum well of a finite depth. Considering the example of a plain nano-heterostructure with a quantum well based on the double heterojunction AlxGa₁₋xAs/GaAs (nanofilm), the authors have calculated the electron energy for a varied thickness of the film. It has been studied the influence of barrier material composition as well as electron-phonon interaction on the electron energy	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Concentration-size dependences for the electron energy in AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs nanofilms	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA