Features of Auger-emission in channeling

dc.contributor.author	Kossko, I.A.
dc.contributor.author	Denisov, A.Ye.
dc.date.accessioned	2017-05-30T05:45:39Z
dc.date.available	2017-05-30T05:45:39Z
dc.date.issued	2014
dc.identifier.citation	Features of Auger-emission in channeling / I.A. Kossko, A.Ye. Denisov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 97-99. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	Features of Auger-emission in channeling
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118361
dc.description.abstract	Shown in this paper is the influence of channeling effect on formation of the signal for low- and high-energy Auger-electrons observed in monocrystalline silicon. It has been ascertained the anisotropic (wave-like) character of the yield value for lowenergy Auger-electrons in silicon, when changing the angle of acting initial radiation during sample rotation.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Features of Auger-emission in channeling	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA