Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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dc.contributor.author	Denysyuk, R.O.
dc.date.accessioned	2017-05-30T05:36:17Z
dc.date.available	2017-05-30T05:36:17Z
dc.date.issued	2014
dc.identifier.citation	Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions / R.O. Denysyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 21-24. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 81.65.Cf, 42.86.+b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118354
dc.description.abstract	The process of CdTe and Cd₁₋x MnxTe dissolution in 30 % H₂O₂–HI–citric acid solutions under reproducible hydrodynamic conditions has been studied. The equal dissolution rate surfaces (Gibbs diagrams) have been plotted. Limiting stages of the semiconductor dissolution process have been determined. Regions of polishing, selective and unpolishing solutions in the mentioned system have been ascertained. The influence of Mn concentrations in solid solutions on the etching rate and quality has been established.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Chemical treatment of Cd₁₋х MnxTe single crystals with H₂O₂–HI–citric acid aqueous solutions	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA