Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing

dc.contributor.author	Shutov, S.V.
dc.contributor.author	Shtan’ko, A.D.
dc.contributor.author	Kurak, V.V.
dc.contributor.author	Litvinova, M.B.
dc.date.accessioned	2017-05-29T19:39:03Z
dc.date.available	2017-05-29T19:39:03Z
dc.date.issued	2007
dc.identifier.citation	Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing / S.V. Shutov, A.D. Shtan'ko, M.B. Litvinova, V.V. Kurak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 4. — С. 26-30. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.Cc, 61.71.Ji, 71.55.Eq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118345
dc.description.abstract	The time dependences of changes of the electrophysical, mechanical, and light emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is revealed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA