Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures

dc.contributor.author	Vlasov, S.I.
dc.contributor.author	Ovsyannikov, A.V.
dc.contributor.author	Ismailov, B.K.
dc.contributor.author	Kuchkarov, B.H.
dc.date.accessioned	2017-05-29T16:39:22Z
dc.date.available	2017-05-29T16:39:22Z
dc.date.issued	2012
dc.identifier.citation	Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures / S.I. Vlasov, A.V. Ovsyannikov, B.K. Ismailov, B.H. Kuchkarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 166-169. — Бібліогр.: 15Х назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Rw
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118305
dc.description.abstract	We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the integral density of surface states, while exerting no influence on the generation centers in the bulk.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA