Graded-gap AlInN Gunn diodes

dc.contributor.author	Storozhenko, I.P.
dc.contributor.author	Yaroshenko, A.N.
dc.contributor.author	Kaydash, M.V.
dc.date.accessioned	2017-05-29T14:52:38Z
dc.date.available	2017-05-29T14:52:38Z
dc.date.issued	2012
dc.identifier.citation	Graded-gap AlInN Gunn diodes / I.P. Storozhenko, A.N. Yaroshenko, M.V. Kaydash // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 176-180. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.uj, 73.40.Lq, 85.30.Fg
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118284
dc.description.abstract	The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. Harmonic and biharmonic modes of operation have been considered. Cutoff frequency and minimum length of the active region have been estimated. Performances of graded-gap AlInN diodes are compared with the performances of InN and AlN diodes	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Graded-gap AlInN Gunn diodes	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA