Impurity scattering of band carriers

dc.contributor.author	Boiko, I.I.
dc.date.accessioned	2017-05-29T13:36:52Z
dc.date.available	2017-05-29T13:36:52Z
dc.date.issued	2010
dc.identifier.citation	Impurity scattering of band carriers/ I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 214-220. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.20. 72.20 Dp
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118238
dc.description.abstract	Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of mobility is determined by relationship between number of ionized and neutral donors and by average energy of electrons.	uk_UA
dc.description.sponsorship	The essential help of Dr. E. B. Kaganovich is gratefully acknowledged.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Impurity scattering of band carriers	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA