Zero bias terahertz and subterahertz detector operating at room temperature

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2
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dc.contributor.author	Momot, N.
dc.contributor.author	Zabudsky, V.
dc.contributor.author	Tsybrii, Z.
dc.contributor.author	Apats’ka, M.
dc.contributor.author	Smoliy, M.
dc.contributor.author	Dmytruk, N.
dc.date.accessioned	2017-05-29T13:15:32Z
dc.date.available	2017-05-29T13:15:32Z
dc.date.issued	2010
dc.identifier.citation	Zero bias terahertz and subterahertz detector operating/ N. Momot, V. Zabudsky, Z. Tsybrii, M. Apats'ka, M. Smoliy, N. Dmytruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 166-169. — Бібліогр.: 11 назв. — англ. at room temperature	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 07.57.Kp, 72.20.Ht
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118225
dc.description.abstract	In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range from 77 to 300 K at various operating mode and frequency. The estimated value of the noise equivalent power at room temperature for detector proposed was 1.3·10⁻⁸ W/Hz¹/² and 5.4·10⁻⁹ W/Hz¹/² at bias current I = 1 mA and I = 0, respectively.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Zero bias terahertz and subterahertz detector operating at room temperature	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA