Optical properties of ZnO aggregates in KBr matrix

dc.contributor.author	Samah, M.
dc.contributor.author	Bouguerra, M.
dc.contributor.author	Khelfane, H.
dc.date.accessioned	2017-05-28T16:45:24Z
dc.date.available	2017-05-28T16:45:24Z
dc.date.issued	2003
dc.identifier.citation	Optical properties of ZnO aggregates in KBr matrix / M. Samah, M. Bouguerra, H. Khelfane // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 496-498. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 81.07.Bc
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118089
dc.description.abstract	Zinc oxide nanocrystals were prepared, using Czochralski method of growth, in KBr matrix during pulling. Good evidences can prove that the quantum confinement effect is the special quality for this nanosystem. As an indication of quantum confinement effect, excellent emissions from band edge have been observed in optical absorption spectra and on selective PL ones. CL spectrum exhibits several levels in band gap allotted to different types of impurities in matrix and within ZnO aggregates.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Optical properties of ZnO aggregates in KBr matrix	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA