On the origin of 300 K near-band-edge luminescence in CdTe

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4
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dc.contributor.author	Glinchuk, K.D.
dc.contributor.author	Litovchenko, N.M.
dc.contributor.author	Strilchuk, O.N.
dc.date.accessioned	2017-05-28T16:41:27Z
dc.date.available	2017-05-28T16:41:27Z
dc.date.issued	2003
dc.identifier.citation	On the origin of 300 K near-band-edge luminescence in CdTe / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 441-443. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 78.55.-m ; 78.55. Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118083
dc.description.abstract	A careful analysis of 300 K near-band-edge luminescence from bulk CdTe and cadmium telluride films is made. It is shown that: (i) the observed difference in 300 K peak positions of the near-band-edge luminescence hvm in CdTe crystals and films, and (ii) the hvm shift to lower energies as the excitation intensity is increased, could not be satisfactory explained by an assumption that free excitons dominate in the formation of the above luminescence. So, the origin of 300 K near-band-edge luminescence in CdTe is not mainly the free exciton one as was proposed earlier, and needs further examination.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	On the origin of 300 K near-band-edge luminescence in CdTe	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA