Atomic defects and physical-chemical properties of PbTe-InTe solid solutions

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 4
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dc.contributor.author	Freik, D.M.
dc.contributor.author	Boychuk, V.I.
dc.contributor.author	Mezhylovsjka, L.I.
dc.date.accessioned	2017-05-28T16:33:02Z
dc.date.available	2017-05-28T16:33:02Z
dc.date.issued	2003
dc.identifier.citation	Atomic defects and physical-chemical properties of PbTe-InTe solid solutions / D.M. Freik, V.I. Boychuk, L.I. Mezhylovsjka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 454-457. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 64.90+b
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118073
dc.description.abstract	Crystal-quasichemical equations of probable mechanisms inherent to formation of solid solutions based on lead telluride of the n-type in PbTe-InTe system are offered. Shown is the possibility to satisfactorily explain experimental results by filling with indium atoms In⁺² <--> In⁺¹ In⁺³ (up to 3 mol. % InTe) octahedral hollows (IH) of close-packed arrangement of tellurium atoms in PbTe crystal lattice. At the greater content of indium telluride, the allocation of both In⁺¹ on OH, and In⁺³ on tetrahedral hollows (TH), accordingly, takes place.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Atomic defects and physical-chemical properties of PbTe-InTe solid solutions	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA