Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys

dc.contributor.author	Halyan, V.V.
dc.contributor.author	Bozhko, V.V.
dc.date.accessioned	2017-05-27T18:02:59Z
dc.date.available	2017-05-27T18:02:59Z
dc.date.issued	2003
dc.identifier.citation	Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys / V.V. Halyan, V.V. Bozhko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 73-75. — Бібліогр.: 11 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 78.66.Jg
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117960
dc.description.abstract	Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a thermoinduced reversible process when the absorption edge is shifted in the same direction after the samples have been annealed at 100 °С.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA