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dc.contributor.author |
Balovsyak, S.V. |
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dc.contributor.author |
Fodchuk, I.M. |
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dc.contributor.author |
Lytvyn, P.M. |
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dc.date.accessioned |
2017-05-27T16:46:49Z |
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dc.date.available |
2017-05-27T16:46:49Z |
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dc.date.issued |
2003 |
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dc.identifier.citation |
Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 61.10.Kw, 61.43.Hv, 68.35.-p |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117940 |
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dc.description.abstract |
The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Determination of surface parameters of solids by methods of X-ray total external reflection |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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