Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 2
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dc.contributor.author	Lysenko, V.S.
dc.contributor.author	Tyagulsky, I.P.
dc.contributor.author	Osiyuk, I.N.
dc.contributor.author	Nazarov, A.N.
dc.date.accessioned	2017-05-27T11:04:20Z
dc.date.available	2017-05-27T11:04:20Z
dc.date.issued	2007
dc.identifier.citation	Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures / V.S. Lysenko, I.P. Tyagulsky, I.N. Osiyuk, A.N. Nazarov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 34-39. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 68.35.-c, 72.20.Jv, 73.20.-r, 73.40.-c, 85.30.Tv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117890
dc.description.abstract	The results of experiments on the influence of recharging the electron traps in a Si-SiO₂ transition layer on the low-temperature characteristics of fully depleted silicon in insulator MOSFET devices are presented. It is shown that the low-dose gammaradiation improves electrophysical parameters of the transition layer.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of traps in gate oxide-Si film transition layers on FD MOSFET's characteristics at cryogenic emperatures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA