Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices

dc.contributor.author	Gavrysh, V.I.
dc.date.accessioned	2017-05-26T17:50:49Z
dc.date.available	2017-05-26T17:50:49Z
dc.date.issued	2011
dc.identifier.citation	Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices / V.I. Gavrysh // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 478-481. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 74.25.fc
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117800
dc.description.abstract	The steady-state linear thermal conductivity problem for an isotropic layer with a thin foreign parallelepipedic inclusion that releases heat has been considered with account of heat dissipation. The methodology for analytic solution of three-dimensional steady-state boundary thermal conductivity problem has been suggested.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Modelling the temperature conditions in three-dimensional piecewise homogeneous elements for microelectronic devices	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA