Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium

dc.contributor.author	Boiko, I.I.
dc.date.accessioned	2017-05-26T17:43:02Z
dc.date.available	2017-05-26T17:43:02Z
dc.date.issued	2011
dc.identifier.citation	Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 437-440. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72, 72.20
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117793
dc.description.abstract	Hall-effect and magnetoresistivity of holes in silicon and germanium are considered with due regard for mutual drag of light and heavy band carriers. Search of contribution of this drag shows that this interaction has a sufficient influence on both effects.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of mutual drag of light and heavy holes on magnetoresistivity and Hall-effect of p-silicon and p-germanium	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA