3C-6H transformation in heated cubic silicon carbide 3C-SiC

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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dc.contributor.author	Vlaskina, S.I.
dc.contributor.author	Mishinova, G.N.
dc.contributor.author	Vlaskin, V.I.
dc.contributor.author	Rodionov, V.E.
dc.contributor.author	Svechnikov, G.S.
dc.date.accessioned	2017-05-26T17:41:58Z
dc.date.available	2017-05-26T17:41:58Z
dc.date.issued	2011
dc.identifier.citation	3C-6H transformation in heated cubic silicon carbide 3C-SiC / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 432-436. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.55.Gs, 78.55.-m, Cr, 78.60.-b, 78.66.Hf
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117791
dc.description.abstract	Results of the research on the photoluminescence study of the 3C-6H-SiC phase transformation are presented. 3C-SiC crystals with in grown 3C-6H transformation and pure perfect 3C-SiC crystals grown by the Tairov-Tsvetkov method without a polytypes joint after high temperature annealing were investigated. Fine structure at the energy of E = 2.73, 2.79 eV, E = 2.588 eV, and E = 2.48 eV that appeared after annealing was described. The role of stacking faults in the process of structure transformation was investigated.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	3C-6H transformation in heated cubic silicon carbide 3C-SiC	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA