Seebeck’s effect in p-SiGe whisker samples

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 4
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dc.contributor.author	Dolgolenko, A.P.
dc.contributor.author	Druzhinin, A.A.
dc.contributor.author	Karpenko, A.Ya.
dc.contributor.author	Nichkalo, S.I.
dc.contributor.author	Ostrovsky, I.P.
dc.contributor.author	Litovchenko, P.G.
dc.contributor.author	Litovchenko, A.P.
dc.date.accessioned	2017-05-26T17:34:32Z
dc.date.available	2017-05-26T17:34:32Z
dc.date.issued	2011
dc.identifier.citation	Seebeck’s effect in p-SiGe whisker samples / A.P. Dolgolenko, A.A. Druzhinin, A.Ya. Karpenko, S.I. Nichkalo, I.P. Ostrovsky, P.G. Litovchenko, A.P. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 4. — С. 456-460 — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.15.Jf, 72.20.Pa
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117783
dc.description.abstract	p-SiGe whisker samples with a diameter of ~40 μm, grown by chemical precipitation from the vapor phase, have been investigated. Temperature dependences of the thermal e.m.f. and conductivity within the temperature interval 20…400 K have been measured. It has been shown that the mobility of holes in p - SiGe whiskers upon the average is 1.5 times higher than that in bulk p - Si samples. p - SiGe whiskers possess smaller phonon scattering and larger phonon dragging in comparison with the bulk p - Si samples.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Seebeck’s effect in p-SiGe whisker samples	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA