Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 3
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dc.contributor.author	Gaidar, G.P.
dc.date.accessioned	2017-05-26T16:12:02Z
dc.date.available	2017-05-26T16:12:02Z
dc.date.issued	2011
dc.identifier.citation	Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge / G.P. Gaidar // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 3. — С. 294-297. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.80.Ed, 61.82.Fk, 72.20.-i
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117756
dc.description.abstract	Studying the γ-irradiation influence on the properties of n-type germanium (n - ‹GeAs›) within the interval of concentrations of the doping arsenic impurity 7.79×10¹³ ≤ NAs ≡ nc ≤ 6.36 × 10¹⁶cm⁻³ has shown that the initial resistivity of single crystals with concentrations NAs ≥ 5×10¹⁵ cm⁻³ remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with NAs ≈ 7.79×10¹³ cm⁻³ and less) the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration nc and their mobility μ.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Changes in Hall parameters after γ-irradiation (⁶⁰Со) of n-Ge	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA