Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 2
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Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions

Pavlovich, I.I. ; Tomashik, Z.F. ; Stratiychuk, I.B. ; Tomashik, V.M. ; Savchuk, O.A. ; Kravtsova, A.S.

Інший ID: PACS 77.84.Bw, 81.65.Cf, Ps

URI: http://dspace.nbuv.gov.ua/handle/123456789/117719

Посилання: Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions / I.I. Pavlovich, Z.F. Tomashik, I.B. Stratiychuk, V.M. Tomashik, O.A. Savchuk, A.S. Kravtsova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 200-202. — Бібліогр.: 8 назв. — англ.

Дата: 2011

Завантажень: 307

Chemical-dynamic polishing of semiconductor materials based on Bi and Sb chalcogenides by using HNO₃–HCl solutions

Анотація:

The chemical etching of Ві₂Те₃ and n-(Ві₂Те₃)₀.₉(Sb₂Te₃)₀.₀₅(Sb₂Se₃)0.05 and p- (Bi₂Te₃)₀.₂₅(Sb₂Te₃)₀.₇₂(Sb₂Se₃)₀.₀₃ crystals of solid solutions with HNO₃–HCl etchant compositions was investigated. The dependences of dissolution rate of these semiconductors on etchant composition, stirring, temperature and their shelf-time storage have been studied. It was shown that the process of dissolution of the investigated materials in the polishing solutions HNO₃–HCl is limited by the diffusion stages.

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