Influence of electron-electron drag on piezoresistance of n-Si

dc.contributor.author	Boiko, I.I.
dc.date.accessioned	2017-05-26T12:54:37Z
dc.date.available	2017-05-26T12:54:37Z
dc.date.issued	2011
dc.identifier.citation	Influence of electron-electron drag on piezoresistance of n-Si / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 183-187. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72, 72.20
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117714
dc.description.abstract	Piezoresistance of n-Si is considered with due regard for inter-valley drag. It has been shown that inter-valley drag gains the piezocoefficient and diminishes the mobility. In the region of nondegenerate carriers, the effect of drag increases when the carrier concentration rises and temperature falls.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Influence of electron-electron drag on piezoresistance of n-Si	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA