Charge transport in bismuth orthogermanate crystals

dc.contributor.author	Bochkova, T.M.
dc.contributor.author	Plyaka, S.N.
dc.date.accessioned	2017-05-26T12:49:26Z
dc.date.available	2017-05-26T12:49:26Z
dc.date.issued	2011
dc.identifier.citation	Charge transport in bismuth orthogermanate crystals / T.M. Bochkova, S.N. Plyaka // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 170-174. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.20.Ht, -i
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117709
dc.description.abstract	Current-voltage relations in bismuth orthogermanate crystals with Ag, Pt, InGa electrodes have been measured in the modes of double and unipolar injection of charge carriers. It has been shown that Bi₄Ge₃O₁₂ is relaxation type semiconductor. The appearance of the regions with negative differential resistance or sublinear rise of the current in characteristics is connected with the injection of the minority charge carriers and recombination processes in the space charge layer.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Charge transport in bismuth orthogermanate crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA