Effect of neutron irradiation on non-equilibrium HfB₂-B₄C composites

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
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dc.contributor.author	Totsky, I.M.
dc.contributor.author	Shynkarenko, V.V.
dc.contributor.author	Popov, O.Yu.
dc.contributor.author	Makara, V.A.
dc.date.accessioned	2017-05-26T09:45:05Z
dc.date.available	2017-05-26T09:45:05Z
dc.date.issued	2013
dc.identifier.citation	Effect of neutron irradiation on non-equilibrium HfB₂-B₄C composites / I.M. Totsky, V.V. Shynkarenko, O.Yu. Popov, V.A. Makara // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 162-165. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.80.Hg
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117688
dc.description.abstract	We studied the effect of neutron irradiation on composite material HfC-HfB₂- C made using rapid reactive hot pressing technology. The histograms of microhardness and results of X-ray phase analysis, obtained both before and after neutron and electron irradiation of the samples, were considered. It was found that secondary electrons make a considerable contribution at low-fluence (~10¹⁴ neutron/cm² ) neutron irradiation. Afluence range was determined at which reduction of composite material microhardness is observed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Effect of neutron irradiation on non-equilibrium HfB₂-B₄C composites	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA