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Crystal field splitting on D↔S transitions of atomic manganese isolated in solid krypton
Репозиторій DSpace/Manakin
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Crystal field splitting on D↔S transitions of atomic manganese isolated in solid krypton
Тема:
Nanostructures and Impurity Centers in Cryogenic Environment
Інший ID:
PACS: 31.70.Dk, 78.40.–q, 78.55.–m
Посилання:
Crystal field splitting on D↔S transitions of atomic manganese isolated in solid krypton / O. Byrne, M.A. Collier, M.C. Ryan, J.G. McCaffrey // Физика низких температур. — 2010. — Т. 36, № 5. — С. 524-531. — Бібліогр.: 13 назв. — англ.
Підтримка:
This research was funded by the Irish Government Enterprise Ireland, SC/98/403 Basic Science research grant to whom MC gratefully acknowledges receipt of a Ph.D. studentship. The iCCD camera used in this work was acquired with the financial support of Science Foundation Ireland (SFI), Investigator grant 02/IN.1/B032. OB gratefully acknowledges the award of a Ph.D. studentship from Embark Initiative Irish Research Council for Science and Engineering (IRCSET) and a John & Pat Hume scholarship from N.U.I. - Maynooth.
Дата:
2010
Переглядів:
875
Завантажень:
576
Анотація:
Narrow excitation features present on the [Ar]3d⁶4s¹ a⁶D(J=9/2–1/2)←[Ar]3d⁵4s² a⁶S1/2 transitions of manganese atoms isolated in solid Kr are analyzed within the framework of weak crystal field splitting. Use of the Wp optical lineshape function allowed identification of multiple zero-phonon lines for individual spin-orbit J states of the a⁶D←a⁶S transition recorded with laser-induced excitation spectroscopy. Excellent agreement exists between the predicted crystal field splitting patterns for the J levels of the a⁶D state isolated in the «red» tetravacancy site of solid Kr. The tetrahedral crystal field of the «red» trapping site splits J>3/2 levels of the a⁶DJ and a⁴D₇/₂ states by approximately 30 cm⁻¹. This report represents the first definitive evidence of crystal field splitting, induced by the weak van der Waals interactions between a neutral metal atom and the rare gas atoms surrounding it in a well defined solid state site.
