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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3 за назвою

Сортувати за: Порядок: Результатів:

  • About the nature of diffusion anisotropy in CdS crystals 
    Borkovskaya, L.V.; Dzhumaev, B.R.; Khomenkova, L.Yu.; Korsunskaya, N.E.; Markevich, I.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction ...
  • Accumulation dynamics of oxygen clusters in silicon and formation of their nonhomogeneous distribution 
    Selishchev, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Kinetics of oxygen distribution variation and oxygen clusters (thermodonors) formation is considered and described by a system of nonlinear equations. Analytic solution is obtained for homogeneous nonstationary distribution ...
  • Acoustodynamic transformation of the defect structure in Hg₁₋xCdx Te alloys 
    Olikh, Y.M.; Savkina, R.K.; Vlasenko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of the investigations of transport properties of n- and p-Hg₁₋xCdxTe semiconductor crystals exposed to intensive ultrasound (≈ 6MHz) are represented. Acousto-stimulated phenomena of concentration change (increase ...
  • Advanced modification of main types of excimer laser resonators 
    Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the paper proposed are some simple modifications of plane-parallel and unstable telescopic resonators the most widely used in excimer lasers. These can increase output energy, density of emission power and improve the ...
  • Advanced scintillation single crystals based on complex oxides with large atomic number 
    Burachas, S.F.; Nagornaya, L.L.; Onishchenko, G.M.; Piven, L.A.; Pirogov, E.N.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    An improved production technology has been developed for scintillation single crystals based on complex oxides with large atomic number – bismuth germanate (BGO), gadolinium silicate (GSO), cadmium tungstate (CWO) and lead ...
  • AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers 
    Beketov, G.V.; Rashkovetskiy, L.V.; Rengevych, O.V.; Zhovnir, G.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology ...
  • Application of scintillators based on single-crystalline Lu₃Al₅O₁₂:Ce³⁺ films for radiation monitoring in biology and medicine 
    Zorenko, Yu.; Gorbenko, V.; Konstankevych, I.; Grinev, B.; Globus, M.; Batentschuk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Possibility of producing screens of X-ray detectors using liquid phase epitaxy on Y₃Al₅O₁₂ substrates covered by Lu₃Al₅O₁₂:Ce single crystalline films (SCF) is studied. Optical, luminescent and luminous characteristics of ...
  • Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere 
    Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Borate single crystals for polyfunctional applications: production and properties 
    Grinyov, B.V.; Dubovik, M.F.; Tolmachev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li₂B₄O₇, LiB₃O₅, b-BaB₂O₄, ...
  • Calculation of absorption coefficients of InSb₁₋xBix solid solutions 
    Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Characterization and optical properties of organic dye films as recording media 
    Kravets, V.G.; Vinnichenko, K.L.; Prygun, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Efficiency of medium choice for optical information recording is generally determined by homogeneity degree of material on the recording surface and by its structure on the film depth. In this respect pyrosolynes should ...
  • Comprehensive investigation of defects in highly perfect silicon single crystals 
    Prokopenko, I.V.; Kislovskii, E.N.; Olikhovskii, S.I.; Tkach, V.M.; Lytvyn, P.M.; Vladimirova, T.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We used X-ray diffraction method of total rocking curves and nondestructive direct observation techniques (atomic force and scanning electron microscopies) to quantitatively determine the defect characteristics (radii and ...
  • Contacts for silicon IMPATT and pick-off diodes 
    Boltovets, N.S.; Goncharuk, N.M.; Krivutsa, V.A.; Chaika, V.E.; Konakova, R.V.; Milenin, V.V.; Soloviev, E.A.; Tagaev, M.B.; Voitsikhovskyi, D.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We studied experimentally: (i) the ways to fabricate metal-n⁺-Si ohmic contacts with Schottky barriers; (ii) how elemental, structural and phase composition of barrier layers in the contact system, as well as of the barrier ...
  • Development and optical characteristics of the macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The promising material for the 2D photonic structure formation for infrared spectrum range is macroporous silicon. There was investigated the electrochemical process of the cylindrical pore formation on n-Si plates for ...
  • Diffraction of optical beams by a half-plane 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Rigorous solution of the optical beam diffraction problem on half plane is represented. Solution is described to representation of edge dislocation wave (EDW) that was introduced for describing the diffraction plane wave ...
  • Diffusion model of defect formation in silicon under light ion implantation 
    Voznyy, M.V.; Gorley, P.M.; Schenderovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well ...
  • Digital aroma technology for chemical sensing: temporal chemical images of complex mixtures 
    Kruglenko, I.V.; Snopok, B.A.; Shirshov, Y.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The reliability of Electronic nose applications is mainly based on the sensitivity, repeatability and discernment properties of the sensors composing the array. Due to nature of the chosen sensitive layers, the sensors are ...
  • Dimensional effects in thin gold films 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Research results of optical constants of thin gold films of different thickness are given in the paper. Their structure was studied using atomic-force microscope. Values of refraction n and absorption k coefficients were ...
  • Dispersion of natural modes in a many-layer planar system 
    Goncharenko, A.V.; Snopok, B.A.; Shirshov, Yu.M.; Venger, E.F.; Zavadskii, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We derive the recurrence dispersion equations for natural modes of a many-layer planar system. As an illustration a five-layer planar system is considered, and solutions for guided-wave polaritons of such a system are ...
  • Effect of excitons on photoconversion efficiency in the p⁺-n-n⁺- and n⁺-p-p⁺-structures based on single-crystalline silicon 
    Gorban, A.P.; Sachenko, A.V.; Kostylyov, V.P.; Prima, N.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We have performed theoretical simulation of the photoconversion efficiency in silicon solar cells for AM0 conditions with regard to excitonic effects. Along with known effects, we have taken into account both radiative and ...

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