Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 1
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Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

Vlasenko, N.A. ; Kononets, Ya.F. ; Denisova, Z.L. ; Kopytko, Yu.V. ; Veligura, L.I. ; Soininen, El. ; Tornqvist, R.O. ; Vasama, K.M.

Інший ID: PACS: 78.60.Fi, 78.66.Hf, 71.55.Gs

URI: http://dspace.nbuv.gov.ua/handle/123456789/119240

Посилання: Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes / N.A. Vlasenko, Ya.F. Kononets, Z.L. Denisova, Yu.V. Kopytko, L.I. Veligura, El. Soininen, R.O. Tornqvist, K.M. Vasama // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 48-55. — Бібліогр.: 13 назв. — англ.

Дата: 2001

Завантажень: 382

Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes

Анотація:

Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors have been studied during initial stage of accelerated aging. Essential differences have been revealed. They are explained in assumption that different impurity centers exist in the ZnS:Mn films grown by using chlorine and metalorganic precursors, namely, MnCl₂, Cli⁻, Cls⁺ and isovalent oxygen traps, respectively. The mechanism of aging in both types of devices is discussed.

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