Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Laser- and g-induced optical absorption of indium-doped sodium-borate glass 
    Kopyshinsky, A.V.; Okhrimenko, B.A.; Zelensky, S.E.; Danilchenko, B.O.; Shakhov, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The laser- and g-induced absorption spectra of indium-doped sodium-borate glass are investigated experimentally. The spectra are interpreted with the use of a model that includes three types of indium centers.
  • Method of low-temperature rise of laser diode quality 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably ...
  • Modified optical OR and AND gates 
    Srinivasulu, Avireni (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    This paper deals with optical OR and AND gate, using unijunction transistor (UJT), light emitting diode (LED), and photo-resistor (LDR). Effort is made to extend the development of the gates using UJT, LDR, and LED to work ...
  • Noise in HgCdTe LWIR arrays 
    Sizov, F.F.; Golenkov, A.G.; Zabudsky, V.V.; Reva, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Mercury cadmium telluride (MCT) hybrid arrays for long-wavelength infrared (LWIR) applications with n+-p-diodes and n-channel charged coupled devices (CCD) silicon readouts were designed, manufactured and tested. Performance ...
  • On a doped transition layer in the space charge region of Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A technique is proposed for estimation of maximal thickness of a doped semiconductor transition layer in a Schottky contact. It is based on taking spectral curves of transverse photovoltage. It is shown that in gallium ...
  • Photoelectric properties of metal-porous silicon-silicon planar heterostructures 
    Brodovoi, A.V.; Brodovoi, V.A.; Skryshevskyi, V.A.; Bunchuk, S.G.; Khnorozok, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin ...
  • Polarization properties and a local structure of (GeSe₂)x(Sb2Se₃)₁-x glasses 
    Malesh, V.I.; Rubish, V.V.; Shpak, I.I.; Rubish, V.M.; Puha, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The results of investigating different parameters (of glasses in Ge-Sb-Se system have been given. The values of structural-sensitive molar IR polarization F have been calculated and its concentrational dependence has been ...
  • Polyassociative thermodynamical model of A₂B₆ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 1. Phase equilibria in initial two-component systems. Hg-Te system 
    Moskvin, P.P.; Rashkovets'kyi, L.V.; Kavertsev, S.V.; Zhovnir, G.I.; Ruden'kyi, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the framework of the theory for associated solutions comprising several complexes of various compositions in a liquid phase, analyzed are phase equilibria in Cd-Hg-Te systems. Checking this theory as to the description ...
  • Scattering mechanisms of electrons in monocrystalline PbTe, PbSe and PbS 
    Freik, D.M.; Nykyruy, L.I.; Shperun, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The theoretical analysis of carrier scattering mechanisms in electronic lead chalcogenide crystals was carried out. The calculation of carrier mobility in wide temperature (4.2-300 К) and concentration (10¹⁶-10²⁰ сm⁻³) ...
  • Temperature dependences of SnTe linear expansion coefficient 
    Rogacheva, E.I.; Popov, V.P.; Nashchekina, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис