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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Magnetic point contact in ferromagnetic semiconductor (Ga,Mn)As 
    Figielski, T.; Wosinski, T.; Morawski, A.; Pelya, O.; Makosa, A.; Dobrowolski, W.; Wrobel, J.; Sadowski, J.; Jagielski, J.; Ratajczak, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We show that narrow constrictions, a few hundred nanometers wide, in ferromagnetic semiconductor (Ga,Mn)As layer exhibit large spin-related magnetoresistance. Moreover, we demonstrate that application of oxygen-ions ...
  • Origin of surface layer on common substrates for functional material films probed by ellipsometry 
    Belyaeva, A.I.; Galuza, A.A.; Kudlenko, A.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A multiple angle ellipsometric method is used to investigate thin film layers on common substrates (gadolinium gallium garnet-GGG, sapphire-Al₂O₃, and glass ceramic sitall) for functional material films. The method evaluates ...
  • Polyassociative thermodynamical model of A²B⁶ semiconductor melt and P-T-X equilibria in Cd-Hg-Te system: 2. Phase equilibria in initial two-component systems. Cd-Te system 
    Moskvin, P.P.; Rashkovets'kyi, L.V.; Kavertsev, S.V.; Zhovnir, G.I.; Ruden'kyi, A.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Phase equilibria in Cd-Hg-Te system are analyzed in the framework of the polyassociative solution model. Checking the mentioned model applicability to description of phase equilibria and search of system thermodynamical ...
  • Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys 
    Halyan, V.V.; Bozhko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a ...
  • Study of DNA interaction with carbon nanotubes 
    Dovbeshko, G.I.; Repnytska, O.P.; Obraztsova, E.D.; Shtogun, Ya.V.; Andreev, E.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Structural characterisation of two different forms of carbon - graphite and single-walled carbon nanotubes (SWCNT) has been done with Raman and FTIR spectroscopy. Interaction of nucleic acids with graphite powder and SWCNT ...
  • The energy structure of free electrons for semiconductor in the field of cylindrical symmetry 
    Stakhira, J.M.; Stakhira, R.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The energetic structure of semiconductor free electrons in the field of cylindrical symmetry whose radial part is a sum of two components, which depend on radial coordinate according to quadratic and biquadratic laws has ...
  • Theory of the free-carrier absorption in quantum wires with boundary roughness scattering 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A theory of free carrier absorption is given for quantum wires when carriers are scattered by boundary roughness and the radiation field is polarized along the length of the wire. The free-carrier absorption coefficient ...
  • The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction ...

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