Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
  • Kostyukevych, S.A.; Morozovska, A.N.; Minko, V.I.; Shepeliavyi, P.E.; Kudryavtsev, A.A.; Rubish, V.M.; Rubish, V.V.; Tverdokhleb, I.V.; Kostiukevych, A.S.; Dyrda, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 ...
  • Karimov, A.V.; Yodgorova, D.M.; Yakubov, E.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Goffered photoreceiver surface in active regions perspective for manufacturing photosensitive structures can be form by chemical and epitaxial technology. Microreliefs are created on initial surface of semiconductor material ...
  • Berezhinsky, L.I.; Venger, E.F.; Matyash, I.E.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties ...
  • Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...
  • Dovbeshko, G.I.; Fesenko, O.M.; Shirshov, Yu.M.; Chegel, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Last decades the enhancement of optical transitions near metal surface was observed under study the optical processes (luminescence, Raman scattering, IR absorption). The effect consists in an essential increase of the ...
  • Markov, V.B.; Khizhnyak, A.I.; Goren, V.; Cook, W.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper discusses the results of the analysis and experimental characterization of a narrow bandpass optical filter based on the Fabry – Perot interferometer configuration with a variable spacing between the mirrors ...
  • Karachevtseva, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photonic crystals are a dynamic direction of modern solid state physics. Today the intensive research (more than 80 %) is concentrated on two-dimensional photonic crystals which have functionality of three-dimensional ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис