Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers ...
  • Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work, ellipsometric measurements were used to optimise the technology of machine working the polished parts made of MgF₂ optical ceramics. The ellipsometry is a high-performance contactless method to control quality ...
  • Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, of influence of elastic deformations on parameters of reflected polarised light in the literature. Using the method of ...
  • Mahtout, S.; Belkhir, M.A.; Samah, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Linear optical properties of CuCl nanocrystals in a NaCl matrix have been studied using optical absorption, cathodoluminescence and X-ray diffraction measurements. Our measurements showed that CuCl nanocrystals were really ...
  • Grinberg, M.; Barzowska, J.; Gryk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present the results of the photoluminescence of the crystals doped with transition metals or rare earth ions obtained under high hydrostatic pressure up to 300 kbar applied in diamond anvil cells (DAC). We have focused ...
  • Mateleshko, N.; Mitsa, V.; Veres, M.; Koos, M.; Stronski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Resonant Raman spectra of stoichiometric glass (g) g-As₄₀Se₆₀ have been investigated. It was observed that the increasing of excitation radiation energy hv>E₀ (E₀ is pseudogap width) changes a shape, intensity, and position ...
  • Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Characteristics of non-linear scattering of powerful pulses of Q-switched YAG:Nd³⁺ laser in an aqueous suspension of submicron-sized black-body particles has been investigated. Proposed is a model describing the results ...
  • Pikaruk, O.O.; Klimovskaya, A.I.; Driga, Yu.A.; Gule, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The analysis of photoluminescence of heterostructures with single elastic-strained In₀.₁₆Ga₀.₈₄As quantum wells is carried out in this work. It is shown, that filling of a quantum well with many quantum subbands results ...
  • Kruglenko, I.V.; Snopok, B.A.; Shirshov, Yu.M.; Rowell, F.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In the present work, the use of the cluster analysis method in the “fuzzy logic” concept for the optimization of the cross-selective sensor arrays (“electronic nose”, EN) is considered. This approach enables to purposefully ...
  • Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...
  • Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type ...
  • Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A photon Green’s function theory is used to incorporate Bethe-Salpeter-like many body corrections in the computations of output spectra of semiconductor quantum well lasers. Coulomb, quantum-confinement, multiple valence ...
  • Davidenko, N.A.; Kuvshinsky, N.G.; Melenevsky, D.A.; Derevyanko, N.A.; Ishchenko, A.A.; Kulinich, A.V.; Neilands, O.; Plotniece, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiar properties of carrier photogeneration in the polymer compositions based on polystyrene containing substituted tetrathiafulvalenes – electron donors, 2,4,5,7-tetranitro-9-fluorenone – acceptor of electrons, cationic ...
  • Owsik, J.; Zarwalska, A.; Janucki, Ja.; Samoylov, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New instrument for applications in metrological measurements of laser pulse energy is presented. Due to its parameters, it can be used as a standard for energy unit of pulse laser radiation. The instrument consists of a ...
  • Bilevych, Ye.O.; Boka, A.I.; Darchuk, L.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F.; Boelling, O.; Sulkio-Cleff, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin ...
  • Sghaier, H.; Bouzaiene, L.; Sfaxi, L.; Maaref, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is ...
  • Smyntyna, V.A.; Borschak, V.A.; Kutalova, M.I.; Zatovskaya, N.P.; Balaban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is ...
  • Savchenko, N.D.; Shchurova, T.N.; Popovych, K.O.; Rubish, I.D.; Leising, G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The results of calculations of the valence band top, conduction band bottom, optical band gap, gap states formed by the homopolar bonds and clusters in ZnS: Cu, Cl crystallophosphors have been presented. The calculation ...
  • Kondratenko, S.V.; Matyash, I.A.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We analyze usage of modulation of electromagnetic radiation polarization in investigations of optical and photoelectric effects in anisotropic crystals. It is shown that when transmission spectra are studied with the ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис