Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...