Benbouza, M.S.; Kenzai-Azizi, C.; Merabtine, N.; Saidi, Y.; Amourache, S.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
Two new structures of active inductance which implement MESFET transistors are proposed in this article. The technological parameters of the components of “inductances” are those of 0.8 µm MESFET technology. We expose the ...