Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Klad’ko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Milenin, V.V.; Sveshnikov, Yu.N.; Sheremet, V.N.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
We investigated a current flow mechanism in the Au−TiBx−n-GaN−i-Al₂O₃
Schottky barrier diodes, in which the space-charge region width is much over the de
Broglie wavelength in GaN. An analysis of the temperature dependences ...