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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10 за назвою

Сортувати за: Порядок: Результатів:

  • Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors 
    Popovych, K.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the ...
  • Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons 
    Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
  • Development of high-stable contact systems to gallium nitride microwave diodes 
    Belyaev, A.E.; Boltovets, N.S.; Ivanov, V.N.; Kapitanchuk, L.M.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Sheremet, V.N.; Sveshnikov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    High-stable heat-resistant low-resistance contact systems with diffusion barriers involving quasi-amorphous TiBx layers are suggested and studied. We have performed the structural and morphological investigations along ...
  • Dielectric characteristics of GaSe nanocrystals intercalated with hydrogen 
    Kaminskii, V.I.; Kovalyuk, Z.D.; Netyaga, V.V.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The results of investigations of dielectric characteristics of GaSe nanocrystals and their hydrogen intercalates are presented. By using the impedance spectroscopy method, it is established that the dielectric spectra ...
  • Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence 
    Savkina, R.K.; Smirnov, A.B.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall ...
  • Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition 
    Primachenko, V.E.; Fedorenko, L.L.; Tsyrkunov, Yu.A.; Zinio, S.A.; Kirillova, S.I.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Current creation caused by water decomposition Н₂О → ОН+Н has been investigated for the case of an Yb-Si electrode pair after the preliminary covering of Si electrodes with transition metal (Ni, Ti, Cr) films, as well ...
  • Effect of oxidation of catalytically active silicon-based electrodes on water decomposition 
    Primachenko, V.E.; Serba, O.A.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this work, we continue to study the revealed phenomenon of current creation in the electrochemical system with distilled water during its decomposition without any applied external voltage. Investigated are catalytically ...
  • Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers 
    Red’ko, R.; Red’ko, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    To study the influence of microwave irradiation on a spectrum of defect states in porous InP, we have measured the luminescence spectra within the range 0.50 to 2.04 eV at 77 K before and after short and long (up to 600 ...
  • Electron energy spectrum in a spherical quantum dot with smooth confinement 
    Holovatsky, V.; Voitsekhivska, O.; Gutsul, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron energy spectrum in a quantum dot (QD) with smooth dependences of the quasiparticle potential energy and the effective mass at the interface between semiconductor media is calculated in the effective mass ...
  • Electron, hole, and exciton spectra in a quantum wire crossing the quantum well 
    Makhanets, O.M.; Gryschuk, A.M.; Tkach, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron, hole, and exciton energy spectra are calculated within the effective mass and rectangular potential approximations for a combined semiconductor nanoheterosystem consisting of a cylindrical semiconductor ...
  • Electro-optical hybrid logic gates 
    Ekkurthi Sreenivasa Rao; Satyam, M.; Lal Kishore, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    An Electro-Optical Hybrid Logic Gate is defined as a circuit that accepts either electrical or optical signals and produces both electrical and optical signals. This paper explores the feasibility of developing hybrid ...
  • Entropic potential as manifold for the reduced entropy representations in superconductivity 
    Bousnane, Z.; Benslama, M.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The “cold” causes superconductivity phenomenon, as a measurement process generating a phase transitions of the second order, and also permitting the rise of phenomenological parameters, but not allowing the stability of ...
  • Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers 
    Danilyuk, A.I.; Dobrovolskiy, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have estimated the frequency characteristics of a photodiode determined by the motion of charge carriers in the space-charge region on the surface generation of carriers in two extreme cases of unalloyed and evenly ...
  • Fabrication of silicon grating structures using interference lithography and chalcogenide inorganic photoresist 
    Min’ko, V.I.; Shepeliavyi, P.E.; Indutnyy, I.Z.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Application of inorganic photoresist based on chalcogenide films for fabrication of submicrometer periodic relief on silicon wafers was investigated. For this purpose, technological process of resistive two-layer ...
  • Features of main band parameters for crystalline modification of Cd₃As₂ without center of symmetry 
    Chuiko, G.P.; Dvornik, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The so-called loops of extremes exist for the modification of Cd₂As₂ without the center of symmetry. The maximal spin splitting of bands is observable along a direction normal to the main crystalline axis. The number of ...
  • Finite-difference time-domain method calculation of light propagation through H-PDLC 
    Kubytskyi, V.; Reshetnyak, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Presented is the study of the diffraction properties of transmission holographic polymer dispersed liquid crystal (H-PDLC) grating. We constructed a two-dimensional model of H-PDLC film with cylindrical LC droplets. ...
  • Flexible electroluminescent panels 
    Vlaskin, V.I.; Vlaskina, S.I.; Koval, O.Yu.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Recently developed ac ZnS-powder electroluminescence (EL) devices have flexibility (thickness is about 60 µm) and can be multisegment, multicolor, as well as rolled and bent. All colors (white, blue, blue-green, green, ...
  • Frequency-dependent dielectric coefficients of TlInS₂ amorphous films 
    Mustafaeva, S.N.; Asadov, M.M.; Qahramanov, K.Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The frequency dispersion of the loss tangent (tgδ) and the ac conductivity (σac) of amorphous films prepared by evaporation of TlInS₂ has been investigated at frequencies f = 5⋅10⁴…3.5⋅10⁷ Hz. It is shown that, at f > ...
  • Graded refraction index antireflection coatings based on silicon and titanium oxides 
    Abdelhakim Mahdjoub (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Thin films with a graded refraction index constituted from silicon and titanium oxides were deposited by plasma enhanced chemical vapor deposition using electron cyclotron resonance. A plasma of oxygen reacted with two ...
  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...

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