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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Optical and photoluminescent properties of Ag/Al₂O₃ nanocomposite films obtained by pulsed laser deposition 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The method of pulsed laser deposition in vacuum from forward and backward particle flows from an erosion torch was used to prepare silver films and Ag/Al₂O₃ nanocomposite films. Measured were transmission and time-resolved ...
  • Optical and photoluminescent properties of nanostructured hybrid films based on functional fullerenes and metal nanoparticles 
    Dmitruk, N.; Borkovskaya, O.; Naumenko, D.; Berezovska, N.; Dmitruk, I.; Meza-Laguna, V.; Alvarez-Zauco, E.; Basiuk, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The chemically cross-linked C₆₀ thin films, capable of binding Ag or Au nanoparticles, were prepared by the gas-phase treatment with diamine for one set of samples and dithiol for another one and decoration with Ag or ...
  • Optical properties of GaSe semiconducting crystals intercalated by CdTe nanoparticles 
    Khalavk, Y.B.; Shcherbak, L.P.; Pyrlya, M.M.; Boledzyuk, V.B.; Kovalyuk, Z.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The transmission spectra of GaSe crystals intercalated by CdTe nanoparticles (NPs) from aqueous colloidal solutions were investigated at 77 K in the range of GaSe excitonic absorption. Solutions of two types – yellow ...
  • Parameters of the energy spectrum for holes in CuInSe₂ 
    Gorley, P.М.; Prokopenko, I.V.; Galochkinа, О.О.; Horley, P.P.; Vorobiev, Yu.V.; González-Hernández, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    This paper reports the coefficients Ca,b for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We also obtained the tensor components for the carrier ...
  • Peculiarities of neutron irradiation influence on GaP light-emitting structures 
    Litovchenko, P.; Litovchenko, A.; Konoreva, O.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) ...
  • Photo-thermoinduced changes of transmission spectra of As₄₀-xSbxS₆₀ amorphous layers 
    Rubish, V.M.; Gera, E.B.; Pop, M.M.; Maryan, V.M.; Kostyukevych, S.O.; Moskalenko, N.L.; Semak, D.G.; Kostyukevych, K.V.; Kryuchin, A.A.; Petrov, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of investigation of the As₄₀-xSbxS₆₀ (x = 0-10) thin films transmission spectra depending on exposure and heat treatment conditions are given. It was established that illumination and annealing of films leads ...
  • Preparation technology and photoluminescence properties of CdTe nanocrystals in colloidal solutions and polymeric matrices 
    Kalytchuk, S.M.; Korbutyak, D.V.; Scherbak, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    An analysis of physical mechanisms responsible for the influence of stabilizer type and ambient material on CdTe nanocrystal growth rate and passivation effectiveness of surface dangling bonds has been carried out. The ...
  • Structure and electrical properties of In₂Se₃Mn layered crystals 
    Kaminskii, V.M.; Kovalyuk, Z.D.; Zaslonkin, A.V.; Ivanov, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    Investigations of the crystalline structure and electrical properties of In₂Se₃ 1 wt. %Mn and In₂Se₃ 6 wt. % Mn crystals have been carried out. We have found formation of a substitutional solid solution for In₂Se₃ 1 ...
  • Theory of a simple and efficient method for the axial optical vortex beam synthesis from a quasi-plane wave 
    Khoroshun, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The diffraction light field is studied by the numerical calculations of Kirchhoff-Fresnel integral and Fourier analysis. Based on combination of these methods, the condition of an axial optical vortex generation in a ...
  • Thin-film heterostructures based on conducting polymers and organic semiconductors 
    Vertsimakha, Ya.I.; Aksimentyeva, O.I.; Perminov, R.J.; Poliovyi, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    We have carried out the experimental verification of a possibility to produce organic heterostructures by using films of organic semiconductors (OS) which are photosensitive in a wide spectral region, absorb light, and ...

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