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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Heterostructure ohmic contacts to p-CdTe polycrystalline films 
    Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case ...
  • Influence of weak magnetic fields treatment on photoluminescence of GaAs 
    Red'ko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 ...
  • Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties 
    Borblik, V.L.; Korchevoi, A.A.; Nikolenko, A.S.; Strelchuk, V.V.; Fonkich, A.M.; Shwarts, Yu.M.; Shwarts, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The technique of thermal vacuum deposition of Ge onto GaAs substrates has been used for obtaining nanocrystalline Ge films. Nanocrystalline character of the films is confirmed by atomic force microscopy of their surface ...
  • Nucleation and growth kinetics of colloidal nanoparticles CdS:Mn in aqueous solution of polyvinyl alcohol 
    Rudko, G.Yu.; Fediv, V.I.; Savchuk, A.I.; Gule, E.G.; Vorona, I.P.; Nosenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Colloidal undoped CdS and doped CdS:Mn nanoparticles were synthesized in the solution of polyvinyl alcohol polymer, and the process of nanoparticles growth was monitored by optical absorption measurements. The inclusion ...
  • Optical and morphological properties of tetragonal Cu₂ZnSnS₄ thin films grown from sulphide precursors at lower temperatures 
    Babichuk, I.S.; Yukhymchuk, V.O.; Semenenko, M.O.; Klyui, N.I.; Caballero, R.; Hreshchuk, O.M.; Lemishko, L.S.; Babichuk, L.V.; Ganus, V.O.; Leon, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Optical constants of Cu₂ZnSnS₄ thin films formed using thermal annealing of pre-deposited layers of copper, zinc and tin sulphides on glass substrates at different temperatures and ambient atmosphere were determined. It ...
  • Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn₁₋xCdxO films grown by dc magnetron sputtering 
    Kolomys, O.; Romanyuk, A.; Strelchuk, V.; Lashkarev, G.; Khyzhun, O.; Timofeeva, I.; Lazorenko, V.; Khomyak, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Ternary Zn₁₋xCdxO (x < 0.12) alloy crystalline films with highly preferred orientation (002) have been successfully deposited on sapphire c-Al₂O₃ substrates using the direct current (dc) reactive magnetron sputtering ...
  • Pekar bipolaron and the virial theorem (arbitrary coupling) 
    Kashirina, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The work is devoted to issues related with implementation of the virial theorem for one-center bipolaron. The virial theorem expressions have been obtained for an electron system with Coulomb interactions in the phonon ...
  • Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm 
    Dobrovolskyi, Yu.; Pidkamin, L.; Brus, V.; Kuzenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows ...
  • Publication Ethics and Publication Malpractice Statement 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics ...
  • Radiation-induced optical darkening and oxidation effects in As₂S₃ glass 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average ...
  • Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions 
    Studenyak, I.P.; Neimet, Yu.Yu.; Rati, Y.Y.; Buchuk, M.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited upon a quartz substrate by rapid thermal evaporation at temperatures 1050, 1200, and 1350 °C. Structural studies of the as-deposited thin films were carried out by scanning ...
  • The growth of weakly coupled graphene sheets from silicon carbide powder 
    Kiselov, V.S.; Lytvyn, P.M.; Nikolenko, A.S.; Strelchuk, V.V.; Stubrov, Yu.Yu.; Tryus, M.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly ...
  • Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing 
    Steblova, O.V.; Evtukh, A.A.; Bratus’, O.I.; Fedorenko, L.L.; Voitovych, M.V.; Lytvyn, O.S.; Gavrylyuk, O.O.; Semchuk, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx ...

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