Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16 за датою випуску

Сортувати за: Порядок: Результатів:

  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...
  • 8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper the results of photoluminescence researches devoted to phase transitions in 6H-3C-SiC have been presented. High pure 6H-SiC crystals grown by Tairov’s method with and without polytype joint before and after ...
  • Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN 
    Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependence of contact resistivity ρс of Ti-Al-TiB₂-Au ohmic contacts to n-GaN and effect of microwave treatment on ρс are investigated. The obtained dependences are described using a model of current flow ...
  • Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle 
    Kryuchenko, Yu.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Proposed in this work is a theoretical model that enables to correctly calculate light emission characteristics of a hybrid nanosystem formed by a spherical semiconductor quantum dot (QD) and spherical metal nanoparticle ...
  • Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS сore-shell nanocrystals 
    Kulish, N.R.; Kunets, V.P.; Narsingi, K.Y.; Manasreh, M.O.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of proton fluence of different doses (up to 9×10¹⁵ protons/cm² ) on the absorption spectra of UV-cured polyurethane films doped by CdSe/ZnS nanocrystals has been investigated. We found that the degradation of ...
  • Wannier–Stark electro-optical effect and photonic modes in 2D macroporous silicon structures with SiO₂ nanocoatings 
    Karachevtseva, L.; Goltviansky, Yu.; Kolesnyk, O.; Lytvynenko, O.; Stronska, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have investigated the IR light absorption oscillations in 2D macroporous silicon structures with SiO₂ nanocoatings, taking into account the Wannier–Stark electrooptical effect caused by a strong electric field on the ...
  • Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions 
    Fodchuk, I.M.; Gutsuliak, I.I.; Zaplitniy, R.A.; Balovsyak, S.V.; Yaremiy, I.P.; Bonchyk, O.Yu.; Savitskiy, G.V.; Syvorotka, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force ...
  • Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN 
    Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. ...
  • On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ 
    Borovoy, N.; Gololobov, Yu.; Isaienko, G.; Salnik, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under ...
  • Use of radiation from PC screen for non-destructive controlling the internal strains in transparent parts 
    Maslov, V.P.; Kachur, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    It is known that the most widely used method to control internal strains is the optical polarization method. However, the sources of polarized radiation are the most problem issue of this method. There are some difficulties ...
  • Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs 
    Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.; Popov, V.; Ilnitsky, M.; Lysenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one ...
  • Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites 
    Trunov, M.L.; Lytvyn, P.M.; Nagy, P.M.; Oberemok, O.S.; Durkot, M.O.; Tarnaii, A.A.; Prokopenko, I.V.; Rubish, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have established that mass-transport processes in two types of amorphous materials, based on light-sensitive inorganic compounds like Se and As₂₀Se₈₀ chalcogenide glasses (ChG), can be enhanced at the nanoscale in the ...
  • Magnetic-ordered and superconducting units inside surface layers of PbTe:Eu crystals grown from melt by using the Bridgman method 
    Zayachuk, D.M.; Ilyina, O.S.; Kaczorowski, D.; Mikityuk, V.I.; Shlemkevych, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Presented in this work are the results of the first systematic study of magnetic properties inherent to surface layers of PbTe:Eu crystals grown from melt with a low initial concentration of Eu impurity using the ...
  • Nonadditive changes in conductivity of micro PDLC under the influence of carbon nanotubes and magnetic nanoparticles 
    Kopčansky, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracka, M.; Tomašovičova, N.; Tomčo, L.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Investigated in this work has been the effect of impurities – magnetic nanoparticles (MN) and multiwall carbon nanotubes (MWNT) – separately and together on morphology and dielectric properties of nematic liquid crystal ...
  • Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts 
    Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • Graphene layers fabricated from the Ni/a-SiC bilayer precursor 
    Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • Generation of optical vortices in rotating uniaxial crystal for light propagation along the perpendicular to its optical axis 
    Sokolenko, B.V.; Rubass, A.F.; Volyar, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have experimentally considered evolution of the Gaussian beam propagating nearly perpendicular to the uniaxial crystal axis. Also we have analyzed the spin and orbital angular momenta and found oscillations of the ...
  • Reflection loss minimization for a ZnO/CdS/CuInSe₂ photovoltaic cell 
    Abdelhakim Mahdjoub; Lazhar Hadjeris (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as ...
  • Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films 
    Rubish, V.M.; Gera, E.V.; Durcot, M.O.; Pop, M.M.; Kostyukevich, S.O.; Kudryavtsev, A.A.; Mykulanynets-Meshko, O.S.; Rigan, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral ...
  • Effect of 1.9-MeV electron irradiation on characteristics of reactively-pressed TiB₂–TiС ceramic composites 
    Totsky, I.N.; Popov, A.Yu.; Makara, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Considered in this paper is the effect of electron irradiation on the phasestructural state and micromechanical characteristics of reactively- and nonreactivelypressed TiB₂–TiС composite ceramic materials. It is shown ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис