Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Результати 98-100 з 100

Vibrational states of hexagonal ZnO doped with Co

Kupchak, I.M.; Serpak, N.F.; Strelchuk, V.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Vibrational density of states of 12.5% cobalt doped bulk hexagonal ZnO has been studied using the density functional theory method. It has been shown that introduction of cobalt into ZnO leads to appearance of additional ...
Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions

Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...
Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method

Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

The nanocomposite – nanoporous silica (SBA-16) containing ZnO quantum dots – was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate ...

Результати 98-100 з 100

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