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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за назвою

Сортувати за: Порядок: Результатів:

  • Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer 
    Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Steady-state electric characteristics of quantum heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels ...
  • Thermal annealing and evolution of defects in neutron-irradiated cubic SiC 
    Bratus, V.Ya.; Melnyk, R.S.; Shanina, B.D.; Okulov, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A careful study of neutron-irradiated cubic SiC crystals (3С-SiC(n)) has been performed using electron paramagnetic resonance (EPR) in the course of their thermal annealing within the 200…1100 °C temperature range. Several ...
  • Thermostabilized photodiode for monitoring radiation of medical lasers 
    Dobrovolsky, Yu.; Pidkamin, L.; Kuzenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The construction of cooled photodiode for medical lasers with non-linearity of output performance in the range from 10⁻⁸ to 10⁻¹ W not more than 1.05 % is suggested. Regulation of cooling the crystal of photodiode is ...
  • Thin-film solar converters based on the p-Cu₁.₈S/n-CdTe surface-barrier structure 
    Bobrenko, Yu.N.; Pavelets, S.Yu.; Semikina, T.V.; Stadnyk, O.A.; Sheremetova, G.I.; Yaroshenko, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    A surface-barrier structure with the transparent p-Cu₁.₈S component was used to make thin-film polycrystalline n-CdTe-based solar converters. Cadmium telluride was grown on CdSe substrates using the quasi-closed volume ...
  • Vibrational states of hexagonal ZnO doped with Co 
    Kupchak, I.M.; Serpak, N.F.; Strelchuk, V.V.; Korbutyak, D.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Vibrational density of states of 12.5% cobalt doped bulk hexagonal ZnO has been studied using the density functional theory method. It has been shown that introduction of cobalt into ZnO leads to appearance of additional ...
  • Voids’ layer structures in silicon irradiated with high doses of high-energy helium ions 
    Starchyk, M.I.; Marchenko, L.S.; Pinkovska, M.B.; Shmatko, G.G.; Varnina, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Structural and optical properties of single crystal silicon irradiated with 27.2 MeV helium ions by using fluences Ф ≥ 10¹⁶ ion/cm² were studied at various beam currents. It was found that at currents 0.25 to 0.45 μА, ...
  • Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method 
    Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The nanocomposite – nanoporous silica (SBA-16) containing ZnO quantum dots – was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate ...

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