Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Kardashev, D.L.; Kardashev, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Local vibrational density of states for disordered graphene has been calculated via Green’s functions method. Disordered material has been modeled with Bethe lattice. Density of states does not include particularities ...
  • Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Kovalchuk, O.V.; Kovalchuk, T.M.; Kucheriavchenkova, N.M.; Sydorchuk, V.V.; Khalameida, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Multiferroics stable in morphological parameters has been created by introducing ferromagnetic (Fe₂O₃) and ferroelectric (LiNbO₃) nanoparticles with the concentration 0.3 wt.% into nematic liquid crystal 6СНВТ. Being based ...
  • Vlaskina, S.I.; Mishinova, V.I.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Nanocrystalline silicon carbide (nc-SiC) films as protective coating and as solar cell material for a harsh environment, high temperatures, light intensities and radiation, were investigated. p- and n-types 100-mm silicon ...
  • Kuryptya, Ya.A.; Savchenko, B.M.; Kovalchuk, O.V.; Kovalchuk, T.M.; Shostak, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By using the oscilloscope method within the frequency range 10 to 10⁶ Hz at the temperature 492.1 K and pressure 11.31 MPa at the output of the single-screw extruder, the dielectric properties of the composite melt – linear ...
  • Milenin, G.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented.
  • Rusinchuk, N.M.; Lozovski, V.Z.; Shydlovska, O.A.; Zholobak, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possible method for evaluation of virus, bacteria and yeasts infectivity based on study of their absorption spectra has been proposed. The decrease in the samples infectivity was caused by adding the CeO₂ nanoparticles. ...
  • Studenyak, I.P.; Kutsyk, M.M.; Studenyak, V.I.; Bendak, A.V.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM ...
  • Kostiukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    With the purpose to improve such service characteristics of transducers on the basis of the surface plasmon resonance (SPR) as the sensitivity and stability, we have analyzed the influences of a structure and a relief of ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис