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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за автором "Sokolovskyi, I.O."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19 за автором "Sokolovskyi, I.O."

Сортувати за: Порядок: Результатів:

  • Analysis of the silicon solar cells efficiency. Type of doping and level optimization 
    Sachenko, A.V.; Kostylyov, V.P.; Gerasymenko, M.V.; Korkishko, R.M.; Kulish, M.R.; Slipchenko, M.I.; Sokolovskyi, I.O.; Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The theoretical analysis of photovoltaic conversion efficiency of highly effective silicon solar cells (SC) has been performed for n-type and p-type bases. Considered here is the case when the Shockley–Read–Hall recombination ...
  • Luminescent converter of solar light into electrical energy. Review 
    Kulish, M.R.; Kostylyov, V.P.; Sachenko, A.V.; Sokolovskyi, I.O.; Khomenko, D.V.; Shkrebtii, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We review a status of the research on conversion of solar energy into electricity by using the systems that split the solar spectrum with a set of luminescent concentrators. Influence of the luminophore choice (rare-earth ...
  • Temperature effect on light polarization in uniaxial crystals 
    Kulish, M.R.; Litvinova, V.M.; Malysh, M.I.; Sokolovskyi, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniaxial ...
  • The influence of the exciton non-radiative recombination in silicon on the photoconversion efficiency. 1. Long Shockley–Read–Hall lifetimes 
    Sachenko, A.V.; Kostylyov, V.P.; Vlasiuk, V.M.; Sokolovskyi, I.O.; Evstigneev, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it has been shown that a new recombination channel becomes operative when ...

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