Анотація:
The results of experimental investigations of distribution functions of nonequilibrium electrons induced by H+ and He+ ion beams with energies 1-2,25 MeV in solid-state plasma of Ge, GaAs and CdTe semiconductors are presented. It is shown, that distribution functions have a power-law character with one power index on the whole electron energy range of 5÷100 eV being investigated; the corresponding power indices are presented. The yields of secondary electron emission induced by He⁺ ions are measured.