Effect of an ac electric field on weak electron localization in Bi films

Effect of an ac electric field on weak electron localization in Bi films

Belevtsev, B.I. ; Hasse, J. ; Anopchenko, A.S. ; Beliayev, E.Yu.

Тема: По всем тематикам журнала

УДК: 539.292

URI: http://dspace.nbuv.gov.ua/handle/123456789/176409

Посилання: Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu. Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.

Підтримка: We acknowledge gratefully the experimental assistance by E. Scheer. We thank H. v. Lohneysen and the Sonderforschungsbereich 196 for support, and V. A. Shklovskij for helpful discussion and for providing us with his theoretical results prior to publication.

Дата: 1996

Завантажень: 268

Effect of an ac electric field on weak electron localization in Bi films

Анотація:

We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.

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