Effect of an ac electric field on weak electron localization in Bi films

dc.contributor.author	Belevtsev, B.I.
dc.contributor.author	Hasse, J.
dc.contributor.author	Anopchenko, A.S.
dc.contributor.author	Beliayev, E.Yu.
dc.date.accessioned	2021-02-04T14:51:21Z
dc.date.available	2021-02-04T14:51:21Z
dc.date.issued	1996
dc.identifier.citation	Effect of an ac electric field on weak electron localization in Bi films / B.I. Belevtsev, J. Hasse, A.S. Anopchenko, E.Yu. Beliayev // Физика низких температур. — 1996. — Т. 22, № 1. — С. 79-85. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/176409
dc.description.abstract	We have studied the effects of weak localization and electron-electron interaction in the conductivity of Bi films at temperatures between 1.1 and 4.2 К in the presence of a high-frequency electric field ( - 9.4 GHz). The experiments were carried out under conditions of no appreciable overheating of electrons due to a microwave radiation. The data obtained permit us to examine the influence of temperature on quantum corrections Δδ(Ω) at high-frequency electric field more comprehensively and reliably than in earlier works. The experimental dependences Δδ(Ω, T) are found to be in good agreement with the known theoretical models.	uk_UA
dc.description.sponsorship	We acknowledge gratefully the experimental assistance by E. Scheer. We thank H. v. Lohneysen and the Sonderforschungsbereich 196 for support, and V. A. Shklovskij for helpful discussion and for providing us with his theoretical results prior to publication.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	По всем тематикам журнала	uk_UA
dc.title	Effect of an ac electric field on weak electron localization in Bi films	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA
dc.identifier.udc	539.292