Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19
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Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1
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Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Vlaskina, S.I. ; Mishinova, G.N. ; Vlaskin, V.I. ; Rodionov, V.E. ; Svechnikov, G.S.

Інший ID: DOI: 10.15407/spqeo19.01.062
PACS 64.70.K-, 78.60.Lc, 81.30.-t

URI: http://dspace.nbuv.gov.ua/handle/123456789/121526

Посилання: Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ.

Дата: 2016

Завантажень: 394

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Анотація:

Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements.

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