Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2016, том 19
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 1
→
Переглянути статтю

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Vlaskina, S.I. ; Mishinova, G.N. ; Vlaskin, V.I. ; Rodionov, V.E. ; Svechnikov, G.S.

Інший ID: DOI: 10.15407/spqeo19.01.062
PACS 64.70.K-, 78.60.Lc, 81.30.-t

URI: http://dspace.nbuv.gov.ua/handle/123456789/121526

Посилання: Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ.

Дата: 2016

Завантажень: 359

Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations

Анотація:

Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements.

Показати повний запис статті