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dc.contributor.author |
Vlaskina, S.I. |
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dc.contributor.author |
Mishinova, G.N. |
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dc.contributor.author |
Vlaskin, V.I. |
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dc.contributor.author |
Rodionov, V.E. |
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dc.contributor.author |
Svechnikov, G.S. |
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dc.date.accessioned |
2017-06-14T15:19:29Z |
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dc.date.available |
2017-06-14T15:19:29Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations / S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2016. — Т. 19, № 1. — С. 62-66. — Бібліогр.: 14 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
DOI: 10.15407/spqeo19.01.062 |
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dc.identifier.other |
PACS 64.70.K-, 78.60.Lc, 81.30.-t |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121526 |
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dc.description.abstract |
Peculiarities of photoluminescence spectra behavior in SiC crystals and thin films with in-grown defects during phase transformations have been studied. On the deep-level(DL)-spectra, as an example, their characteristics and behavior were investigated. It has been shown that all DL spectra have the same logic of construction and demonstrate identical behavior of the thin structure elements. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Peculiarities of photoluminescence spectra behavior in SiC crystals and films during phase transformations |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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