Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9
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Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 2
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Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals

Makara, V.A. ; Steblenko, L.P. ; Kolchenko, Yu.L. ; Naumenko, S.M. ; Lisovsky, I.P. ; Mazunov, D.O. ; Mokliak, Yu.Yu.

Інший ID: PACS 81.40.-z

URI: http://dspace.nbuv.gov.ua/handle/123456789/121440

Посилання: Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals / V.A. Makara, L.P. Steblenko, Yu.L. Kolchenko, S.M. Naumenko, I.P. Lisovsky, D.O. Mazunov, Yu.Yu. Mokliak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 1-3. — Бібліогр.: 9 назв. — англ.

Підтримка: This work was partially supported by Joint fundamental investigations project of State Fund of fundamental investigations of Ukraine and Belarussian Republican Fund of fundamental investigations “DFFD– BRFFD–2005” (project No 10.01/008).

Дата: 2006

Завантажень: 393

Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals

Анотація:

IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect of magnetic field on the defect structure of the investigated crystals.

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